field-effect transistor

Among them , the control unit of the primary and subordinate CPU structure has very high precision of control , takes the power field-effect transistor as the power device .

其中，主从CPU结构的控制单元具有很高的控制精度；采用了功率场效应管作为功率器件。

Unified Description About Working Principle of Insulated Gate Field-Effect Transistor

绝缘栅场效应管工作原理的统一表述

The Grid Voltage Effect in Carrier Injection of Organic Field-effect Transistor

栅压对有机薄膜场效应晶体管中载流子注入的影响

The Technology and Research on Properties of Sic Field-Effect Transistor

碳化硅场效应晶体管技术与特性研究

The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory

铁电薄膜场效应晶体管存储器件的失效机制及器件力学

Analysis and Fabrication of Light-emitting Field-effect Transistor Based on Pentacene

并五苯场效应发光管机理分析与场效应管制作

The field-effect transistor ( FET ) is an important member of the electronic family .

场效应晶体管是电子元器件家族中的一个重要成员。

Expression of CaR in Rat Uterus Silver Ion-sensitive Field-Effect Transistor Sensor with Longevity Life

钙离子敏感受体在大鼠子宫中的表达长寿命银离子敏感场效应晶体管传感器

This paper designed an analog multiplication that unaided to input and applying field-effect transistor .

本文研究了一种设计条件独立于输入的，应用场效应管的改进型模拟乘法器。

The Analyses of Field-effect Transistor in Duplex Operation

分析双工无线电话机中场效应管的应用

The Characteristics of Noise of Silicon Dual-Gate MOS Field-Effect Transistor

硅双栅MOS场效应晶体管的噪声特性

The Short Channel Effect of Dual-Gate MOS Field-Effect Transistor

双栅MOS场效应晶体管的短沟道效应

Relative Sensitivity of Sector Split-Drain Magnetic Field-Effect Transistor Based on Geometrical Correction Factor of Sector Hall Plate

基于扇形霍尔板几何修正因子的分裂漏磁敏场效应晶体管相对灵敏度研究

Low voltage pentacene thin film field-effect transistor

低电压并五苯薄膜场效应晶体管

Small organic molecule is an important kind of organic semiconductor materials and affects directly on the application of the field-effect transistor .

有机小分子半导体材料作为有机半导体材料的重要组成部分，它的发展直接制约着有机场效应晶体管的应用。

A New Goated Wire Ca ~ ( 2 + ) - Ion Sensitive Field-Effect Transistor

一种新型的涂丝钙离子场效应敏感器件

Silver Ion-sensitive Field-Effect Transistor Sensor with Longevity Life

长寿命银离子敏感场效应晶体管传感器

Fabrication and Characteristics of Pb ( Zr , Ti ) O_3Ferroelectric Field-Effect Transistor

Pb（Zr，Ti）O3铁电场效应晶体管的制备及性能研究

A new photo detector-bipolar photo gate field-effect transistor for CMOS image sensor is presented and its analytical model is also established .

提出了一种用于CMOS图像传感器的新结构光电探测器件&双极光栅场效应晶体管。

Organic field-effect transistor ( OFET ) is the basis for electronic products toward thinner and lighter direction in the future .

有机场效应晶体管（OFET）是未来电子产品向着更轻更薄方向发展的基础。

The base circuit cell of the de - cision circuit is source - coupled field-effect transistor logic ( SCFL ) circuit .

判决电路的基本单元为源耦合场效应晶体管逻辑（SCFL）电路，时钟提取电路由预处理器和锁相环构成。

The characteristic of noise is studied for dual-gate MOS field-effect transistor ( DG & MOSFET 'S ) in this paper .

本文是对双栅MOS场效应晶体管（简写为DG&MOSFET'S）噪声特性的研究。

Aiming at the shortcoming of the typical field-effect transistor ( FET ) switch , this paper proposes a kind of novel FET switch .

针对典型场效应管开关电路的缺点，提出了一种新的场效应管开关。

Organic Thin-film Field-effect Transistor , Light-emitting and Display-driving

有机薄膜场效应晶体管、发光和显示驱动

Their FET channel devices have potential applications in the field-effect transistor , active-driven displays , sensor and so on . 1 .

这类材料在场效应晶体管、有源驱动显示方面、传感器方面、大规模集成电路方面具有潜在的应用价值。

A novel SiC Schottky Barrier Source / Drain Metal-Oxide-Semiconductor Field-Effect Transistor ( SiC SBSD-MOSFET ) is proposed in this dissertation .

本文提出了一种新型SiC金属氧化物半导体场效应晶体管（MOSFET）结构&SiC肖特基势垒源漏MOSFET。

Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain , such as learning and memory by combining with field-effect transistor technique .

神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。

A simulation study of metal-oxide-semiconductor field-effect transistor with Silicon-based Schottky Barrier contacts for source and drain ( SBSD-MOSFET ) is presented in this paper .

本文对硅基肖特基源漏MOSFET（简称SBSD-MOSFET）进行模拟研究。

This paper adopts the methods of nanowire preparation , assembly , testing and analysis , using a single ZnO nanowires prepared by ZnO nanowire field-effect transistor ( FET ) .

本文采用纳米线制备、组装、测试及分析方法，利用单根ZnO纳米线制备了ZnO纳米线场效应晶体管（FET）。

A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor .

方便调节剂能形成一个射极跟随晶体管发射极地区，其连接到来源或流失的场效应晶体管。